NGTB60N60SWG, БТИЗ транзистор, 120 А, 2 В, 298 Вт, 600 В

Характеристики

NGTB60N60SWG, БТИЗ транзистор, 120 А, 2 В, 298 Вт, 600 В IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные